Kingston SODIMM DDR3 4Gb PC1600 CL11
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Kingston SODIMM DDR3 4Gb PC1600 CL11

Kingston SODIMM DDR3 4Gb PC1600 CL11 / This document describes ValueRAM's 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM),

478,00 MAD
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Description

KEY FEATURES:
FORM FACTOR SODIMM 204 ears 
CAPACITY 4Gb 
RAM TYPE DDR3 
SPEED 1600 Mhz
Nº MODULES
RAM LATENCY CL11 
TENSION 1.35 v
COMPATIBLE MAC
ETC
TECHNICAL DATA:

This document describes ValueRAM's 512M x 64-bit (4GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low voltage, memory module, based on eight 512M x 8-bit FBGA components.
The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V.
This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.376 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100 o C
*Power will vary depending on the SDRAM.

FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component (Chips en las dos caras)

Fiche technique

EX-A022613G